Method of manufacturing complementary metal-oxide-semiconductor structure forming single technological cycle, involves performing deposition of silicon dioxide to create protective coating and performing photolithography to form contact pads to crystal of integrated circuit
	GRABEZHOVA V K
	2023-01-25
专利权人	VEGA DESIGN CENT BIOMICROELECTRONIC TECH (VEGA-Non-standard)
申请日期	2023-01-25
专利号	RU2023101621-A
成果简介	NOVELTY - The method involves performing photolithography and antimony diffusion followed by acceleration. The growth of an n-type epitaxial layer is performed. The photolithography and boron diffusion are followed by acceleration to create separation regions. The application of the main dielectric silicon dioxide (SiO2). The photolithography and ion implantation with phosphorus is performed. The acceleration of boron- and phosphorus-doped regions is performed. The deposition of boron-phosphosilicate glass to form interlayer dielectric insulation is performed. The photolithography and etching of interlayer insulation to create contacts are performed. The deposition of aluminum is performed. The photolithography is performed to create interconnects. The deposition of silicon dioxide is performed to create a protective coating. The photolithography is performed to form contact pads to the crystal of an integrated circuit. USE - Method of manufacturing complementary metal-oxide-semiconductor structure forming single technological cycle for manufacturing elements of control circuit of powerful power transistor.
IPC 分类号	H01L-021/8238
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/22340
专题	中国科学院新疆生态与地理研究所
作者单位	VEGA DESIGN CENT BIOMICROELECTRONIC TECH (VEGA-Non-standard)
推荐引用方式 GB/T 7714	GRABEZHOVA V K. Method of manufacturing complementary metal-oxide-semiconductor structure forming single technological cycle, involves performing deposition of silicon dioxide to create protective coating and performing photolithography to form contact pads to crystal of integrated circuit. RU2023101621-A[P]. 2023.

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