Static induction and heterojunction source integrated high-voltage FET, has structure provided with vertical channel, where low-resistance thin layer of gallium arsenide and germanium match lattices of gallium arsenide and silicon
	MAKSIMENKO YU N; GRABEZHOVA V K; GORDEEV A I
	2023-01-25
专利权人	VEGA DESIGN CENT BIOMICRELECTRONIC TECHN (VEGA-Non-standard)
申请日期	2023-01-25
专利号	RU2023101620-A
成果简介	NOVELTY - The FET has a structure provided with a vertical channel. A high-resistance region of conductivity type is formed above a low-resistance region of first conductivity type of silicon, which is a drain. A gate region of second conductivity type is formed in the form of a cellular structure. An isotypic heterojunction is made of aluminum and formed in a source region. A low-resistance thin layer of gallium arsenide and a thin layer of germanium match lattices of gallium arsenide and silicon. USE - Static induction and a heterojunction source integrated high-voltage FET.
IPC 分类号	H01L-029/772
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/22339
专题	中国科学院新疆生态与地理研究所
作者单位	VEGA DESIGN CENT BIOMICRELECTRONIC TECHN (VEGA-Non-standard)
推荐引用方式 GB/T 7714	MAKSIMENKO YU N,GRABEZHOVA V K,GORDEEV A I. Static induction and heterojunction source integrated high-voltage FET, has structure provided with vertical channel, where low-resistance thin layer of gallium arsenide and germanium match lattices of gallium arsenide and silicon. RU2023101620-A[P]. 2023.

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