Gas sensor for methanol and ethanol vapors, has substrate made of dielectric material with semiconductor films of copper oxide deposited on semiconductor film by method of thermoresistive evaporation in vacuum and then by ion-plasma synthesis of film of linear-chain carbon
2023-06-15
专利权人PLATONOV P S (PLAT-Individual)
申请日期2023-06-15
专利号RU2023115762-A
成果简介NOVELTY - The gas sensor has a substrate made of a dielectric material with semiconductor films of copper oxide deposited on semiconductor film by the method of thermoresistive evaporation in a vacuum and then by ion-plasma synthesis of a film of linear-chain carbon by deposition in a vacuum of graphite evaporated by a pulsed arc discharge using plasma created by an arc discharge outside the discharge gap in the form of compensated current less carbon plasma clusters with a specific density with a certain duration. The carbon plasma is stimulated with an inert gas in the form of an ion flow with an energy of 150-2000 eV which is directed perpendicular to the flow of carbon plasma and processed by thermal annealing of the resulting metal-carbon system in a furnace at temperatures of 250-400 ° C for 20-120 minutes to obtain a composite copper oxide/ low dielectric constant (CuxO/LCU) film. Film electrodes are made by thermal deposition of an aluminum film in a vacuum. USE - Gas sensor for methanol and ethanol vapors.
IPC 分类号G01N-027/12
国家俄罗斯
专业领域化学化工
语种英语
成果类型专利
文献类型科技成果
条目标识符http://119.78.100.226:8889/handle/3KE4DYBR/21607
专题中国科学院新疆生态与地理研究所
作者单位
PLATONOV P S (PLAT-Individual)
推荐引用方式
GB/T 7714
PLATONOV P S,SMIRNOV A V,PETROV D V,et al. Gas sensor for methanol and ethanol vapors, has substrate made of dielectric material with semiconductor films of copper oxide deposited on semiconductor film by method of thermoresistive evaporation in vacuum and then by ion-plasma synthesis of film of linear-chain carbon. RU2023115762-A[P]. 2023.
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