Method for growth of n-type zinc-oxide (ZnO) film involves depositing radio frequency sputtering carried out at room temperature for formation of different types of n-type zinc-oxide film samples, fabricating samples of n-type zinc-oxide (ZnO) film shows n type nature
	NAGESH G; SRIDHAR B; KUMAR M; PRASAD S V S
	2023-09-30
专利权人	MLR TECHNOLOGY INST (MLRT-Non-standard)
申请日期	2023-09-30
专利号	IN202341065919-A
成果简介	NOVELTY - Method for the growth of n-type zinc-oxide (ZnO) film involves (a) depositing RF (radio frequency) sputtering carried out at room temperature for the formation of different types of n-type zinc-oxide (ZnO) film samples, (b) fabricating samples of n-type zinc-oxide (ZnO) film shows n type nature, and (c) fabricating samples of n-type zinc-oxide (ZnO) film shows different electron concentration, Hall electron mobility and sheet resistivity. USE - Method for the growth of n-type zinc-oxide (ZnO) film. ADVANTAGE - The electronic properties of n-type zinc-oxide (ZnO) film changes with variation in its oxygen mole fractions. A simple as well as economical method having ease of fabrication for n-type zinc-oxide (ZnO) film have been proposed and variation in its electronic properties such as electron concentration, Hall mobility and sheet resistivity have been discussed in order to find its usage in wide range of optoelectronic devices.
IPC 分类号	A61K-031/277 ; A61K-031/404 ; A61K-031/506 ; A61K-045/06 ; A61P-035/02 ; A61P-043/00
国家	印度
专业领域	化学化工
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/20174
专题	中国科学院新疆生态与地理研究所
作者单位	MLR TECHNOLOGY INST (MLRT-Non-standard)
推荐引用方式 GB/T 7714	NAGESH G,SRIDHAR B,KUMAR M,et al. Method for growth of n-type zinc-oxide (ZnO) film involves depositing radio frequency sputtering carried out at room temperature for formation of different types of n-type zinc-oxide film samples, fabricating samples of n-type zinc-oxide (ZnO) film shows n type nature. IN202341065919-A[P]. 2023.

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