| High-frequency gallium nitride amplifier transistor involves substrate and a buffer layer | |
| 2023-12-27 | |
| 专利权人 | MOSC INST ELECTRONIC TECHNOLOGY NAT RES (MOEL-Soviet Institute) |
| 申请日期 | 2023-12-27 |
| 专利号 | RU2822785-C1 |
| 成果简介 | NOVELTY - Use for unipolar positive supply of transistors in amplification circuits. Essence of the invention consists in the fact that in the proposed transistor design, which includes a substrate and a buffer layer, a GaN channel layer, a first barrier sublayer AlyGa1-yN, second barrier sublayer AlxGa1-xN, spatially separated electrodes of source, gate and drain, molar fraction of aluminium in second barrier sublayer is more than 50%, thickness of the first barrier sublayer is equal to 1–2 nm, thickness of the second barrier sublayer is 1–6 nm. USE - Electricity. ADVANTAGE - Enabling reduction of electron density in the transistor channel. 1 cl, 2 dwg |
| IPC 分类号 | H01L-029/778 |
| 国家 | 俄罗斯 |
| 专业领域 | 材料科学 |
| 语种 | 英语 |
| 成果类型 | 专利 |
| 文献类型 | 科技成果 |
| 条目标识符 | http://119.78.100.226:8889/handle/3KE4DYBR/18689 |
| 专题 | 中国科学院新疆生态与地理研究所 |
| 作者单位 | MOSC INST ELECTRONIC TECHNOLOGY NAT RES (MOEL-Soviet Institute) |
| 推荐引用方式 GB/T 7714 | EGORKIN V I,ZHURAVLEV M N,ZEMLYAKOV V E,et al. High-frequency gallium nitride amplifier transistor involves substrate and a buffer layer. RU2822785-C1[P]. 2023. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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