| Power transistor based on aln/gan heterostructure with 2d electron gas comprises substrate | |
| 2023-12-28 | |
| 专利权人 | UNIV MISIS NAT SCI & TECHNOLOGY (UMNS-C) |
| 申请日期 | 2023-12-28 |
| 专利号 | RU2823223-C1 |
| 成果简介 | NOVELTY - Invention relates to solid-state electronics devices, and in particular to the design of a power transistor based on compounds of group III nitrides. Power transistor based on AlN/GaN heterostructure with 2D electron gas consists of a substrate, a GaN buffer layer deposited on the substrate, ultrathin barrier layer AlN ultrathin not more than 7, applied on buffer layer, protective upper layer of GaN, applied on barrier layer, source electrodes, gate and drain, applied on protective layer and spatially separated from each other, passivating layer Si3N4, applied on protective layer between electrodes, as well as metallization of the field plate deposited on the passivating layer and electrically connected to the gate, wherein the distance between the gate and the drain, as well as the length of the field plate – interrelated values selected based on the required value of breakdown voltage. USE - Electricity. ADVANTAGE - Invention enables to obtain a power transistor based on a III-nitride heterostructure, characterized by a layer resistance of less than 250 Ohm/□, with a topology providing breakdown voltage of more than 100 V. 1 cl, 4 dwg |
| IPC 分类号 | H01L-029/76 ; H01L-029/768 ; H01L-029/772 |
| 国家 | 俄罗斯 |
| 专业领域 | 材料科学 |
| 语种 | 英语 |
| 成果类型 | 专利 |
| 文献类型 | 科技成果 |
| 条目标识符 | http://119.78.100.226:8889/handle/3KE4DYBR/18622 |
| 专题 | 中国科学院新疆生态与地理研究所 |
| 作者单位 | UNIV MISIS NAT SCI & TECHNOLOGY (UMNS-C) |
| 推荐引用方式 GB/T 7714 | RYZHUK R V,GUSEV A S,KARGIN N I,et al. Power transistor based on aln/gan heterostructure with 2d electron gas comprises substrate. RU2823223-C1[P]. 2023. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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