Method of forming vanadium dioxide microstructure containing metal-semiconductor transition
	LEBEDEVA A A; MAKAREVICH A M; MAKAREVICH O N; BOYTSOVA O V
	2024-02-14
专利权人	UGO LLC (UGOU-Non-standard)
申请日期	2024-02-14
专利号	RU2830793-C1
成果简介	NOVELTY - Invention relates to material science and microelectronics and can be used in making transistors, microactuators, bolometers, thermochromic smart windows, modulators and switches in the terahertz range. First, a solution of the vanadyl complex is prepared by mixing organic acids and inorganic vanadium-containing precursors with constant stirring and heating to 60 °C. For example, oxalic acid and vanadium pentoxide or ammonium metavanadate are mixed in molar ratio of 2:3 or 2:1, respectively, or citric acid and vanadium pentoxide in molar ratio of 2:1. Concentration of cations (V4+) in the obtained solution of the vanadyl complex is 0.005-0.1 M. Films of VO2(B) are then formed by hydrothermal synthesis, for which pre-cleaned substrates are placed in Teflon inserts, filled with prepared solution of vanadyl complex, additional solvents are added, inserts are placed in a stainless steel autoclave and heat treated for 4-48 hours at 160-220 °C with subsequent cooling to room temperature. Additional solvents used are ethylene glycol and water in volume ratio of 0:100 to 50:50 or ethyl alcohol and water in volume ratio of 0:100 to 50:50. Then the substrates with the VO2(B) films deposited on them are removed from the solution, washed, dried at room temperature and treated with femtosecond laser radiation, which initiates the transition from the VO2(B) metastable phase to the VO2(M) stable phase, at power 0.5-10 W, frequency 75-100 kHz, focal distance 120-12,000 mm and speed of laser 1-1.8 mm/min. Substrates with surface crystallographic parameters close to VO2(M) are used. Topological structure from VO2, obtained by said method, has resolution of not more than 1 mcm, semiconductor-metal transition with change in conductivity by 1,000-10,000 times in temperature range of 30-80 °C and a change in throughput in range from 0 to 2 THz, which is not less than 80%. USE - Materials science; microelectronics. ADVANTAGE - Method of producing said topological structure is easily scaled and simplified owing to exclusion of photolithography methods and the stage of long-term annealing under high vacuum conditions in a controlled atmosphere. 8 cl, 2 ex
IPC 分类号	C01G-031/02 ; C30B-029/16 ; C30B-030/00 ; C30B-007/10 ; H10N-097/00
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/18123
专题	中国科学院新疆生态与地理研究所
作者单位	UGO LLC (UGOU-Non-standard)
推荐引用方式 GB/T 7714	LEBEDEVA A A,MAKAREVICH A M,MAKAREVICH O N,et al. Method of forming vanadium dioxide microstructure containing metal-semiconductor transition. RU2830793-C1[P]. 2024.

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