Carrier selective electrode-based optoelectronic device comprises carrier selective electrode layer, photoactive absorber layer, hole transport layer, where carrier selective electrode layer is formed of metal foil and metal, or metal oxide film and exhibits dual function as substrate layer
	KUMAR A; GHOSH D S
	2024-02-28
专利权人	INDIAN TECHNOLOGY BHILAI INST (INTE-Non-standard)
申请日期	2024-02-28
专利号	IN202421014631-A
成果简介	NOVELTY - Carrier selective electrode-based optoelectronic device comprises a carrier selective electrode layer, a photoactive absorber layer, a hole transport layer, and a top transparent electrode layer. The carrier selective electrode layer is formed of a metal foil and a metal, or metal oxide film and exhibits dual function as substrate layer and as electrode. The photoactive absorber layer is formed of methyl ammonium lead iodide (MAPI) based perovskite. The hole transport layer is formed of a Spiro-OMeTAD (2,2',7,7'- tetrakis(N,N-di-p-methoxyphenylamine)9,9'-spirobifluorene) material. The top transparent electrode layer is a three layered oxide-metal-oxide stack. The carrier selective electrode-based optoelectronic device is a perovskite solar cell. USE - Carrier selective electrode-based optoelectronic device. ADVANTAGE - The carrier selective electrode-based optoelectronic device that exhibits a power conversion efficiency (PCE) of over 10.64% and a high specific power of over 3.5 W/g, solves the challenge associated with polymer substrates by providing flexible alternative material and fabrication techniques, and exhibits mechanical flexibility or bendability and low sheet resistance. The metallic foil as a carrier selective electrode provides cost-effective, flexible, lightweight and mechanically robust device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of fabrication of a carrier selective electrode-based optoelectronic device, which involves (a) taking a metal foil of a predefined thickness by rinsing with deionized water and isopropyl alcohol to obtain a clean metal foil; (b) treating the clean metal foil of step (a) with argon plasma to obtain a plasma-treated metal foil followed by titanium deposition under optimized parameters and heating under 150-500℃ to obtain a carrier selective electrode layer; (c) transferring the carrier selective electrode layer obtained in step (b) into a nitrogen-filled glove box and treating with a precursor solution to obtain a photoactive absorber layer; (d) depositing a solution of Spiro-OmeTAD by spin coating at 3000 revolutions per minute (rpm) for 30 seconds to obtain a hole transport layer; and (e) taking out the carrier selective electrode layer after obtaining hole transport layer of step (d) from the glove box and keeping in an ambient environment for overnight followed by depositing a top transparent electrode (TE) layer and applying an antireflection coating (ARC) of magnesium fluoride by e-beam evaporation to obtain a carrier selective electrode-based optoelectronic device, where metal foil in step (a) is Al (aluminium), Ti (titanium), Sn (tin), Ag (silver), Cu (copper), Cr (chromium), Ni (nickel), Zn (zinc), Fe (iron), W (tungsten), Mo (molybdenum), stainless steel, the predefined thickness in step (a) is in range of 1-1000 µm, and the optimized parameters in step (b) include a sputtering chamber that is evacuated to vacuum level ranging from 1×10-5to 1×10-8at a working pressure of 3× 10-3mbar, at a power of 100 watt (W), and top transparent electrode layer in step (e) is a three layered nickel oxide (NiO)/Ag/NiO stack having a thickness combination in a range of 0-60 nanometer (nm) (for bottom NiO), 3 to 20 nm (for Ag) and (0 to 60nm (for top NiO)).
IPC 分类号	C23C-014/08 ; G02B-006/12 ; H01L-051/00 ; H01L-051/42 ; H01L-051/44
国家	印度
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/17957
专题	中国科学院新疆生态与地理研究所
作者单位	INDIAN TECHNOLOGY BHILAI INST (INTE-Non-standard)
推荐引用方式 GB/T 7714	KUMAR A,GHOSH D S. Carrier selective electrode-based optoelectronic device comprises carrier selective electrode layer, photoactive absorber layer, hole transport layer, where carrier selective electrode layer is formed of metal foil and metal, or metal oxide film and exhibits dual function as substrate layer. IN202421014631-A[P]. 2024.

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