Method of producing thin transparent gas-sensitive films TiO less than sub greater than 2 less than /sub greater than -SnO less than sub greater than 2 less than /sub greater than
	BAYAN E M; VOLKOVA M G; STARNIKOVA A P; PETRO V V
	2024-03-18
专利权人	UNIV SOUTH FEDERAL (USOF-C)
申请日期	2024-03-18
专利号	RU2830131-C1
成果简介	NOVELTY - Invention relates to thin-film technology of producing oxide semiconductor nanomaterials. Method involves formation of thin films of TiO2-SnO2 or mixed oxides of tin (IV) and titanium (IV) on substrates by immersion with further drying and subsequent thermal treatment at temperature of 500 °C for 2 hours. Glass is used as substrate material. Formation of thin films of pure phases of tin or titanium oxides is carried out from solutions abietates of titanium (Ti(C19H29COO)4) and tin (Sn(C19H29COO)4). Formation of thin films of mixed oxides of titanium (IV) and tin (IV) is carried out from solutions abietates of titanium (Ti(C19H29COO)4) and tin (Sn(C19H29COO)4) with ratio of titanium (IV) to tin(IV) from 95 to 5 to 99 to 1 mol.%, containing crystallites of metal oxides with size from 6 to 16 nm. Thickness of the films is controlled from 30 nm to 250 nm. When depositing two nickel contacts, having a gas-sensitive response in range of 175-395 to nitrogen dioxide with concentration of 10 ppm at an operating temperature of 200 °C. USE - Chemistry. ADVANTAGE - Invention enables to obtain films which are transparent in the visible range of light with optical transmission coefficient of at least 80%. 5 cl, 5 dwg
IPC 分类号	H01B-001/08
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/17675
专题	中国科学院新疆生态与地理研究所
作者单位	UNIV SOUTH FEDERAL (USOF-C)
推荐引用方式 GB/T 7714	BAYAN E M,VOLKOVA M G,STARNIKOVA A P,et al. Method of producing thin transparent gas-sensitive films TiO less than sub greater than 2 less than /sub greater than -SnO less than sub greater than 2 less than /sub greater than. RU2830131-C1[P]. 2024.

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