| METHOD OF DETECTING MOMENT OF COMPLETION OF CONDITIONING OF REACTOR OF PLASMA-CHEMICAL ETCHING PLANT | |
| 2024-03-21 | |
| 专利权人 | KURCHATOVSK NAT RES CENT INST (KURC-Non-standard) |
| 申请日期 | 2024-03-21 |
| 专利号 | RU2832004-C1 |
| 成果简介 | NOVELTY - Invention relates to the technology of manufacturing integrated circuits, power electronics devices and micromechanical devices (MEMS) based on silicon. Disclosed is a method for detecting the moment of completion of conditioning a reactor of a plasma-chemical etching plant, based on measuring plasma potential by a Langmuir electrostatic probe, wherein during plasma process in reactor there is no processed plate, measurement is performed in reference argon plasma, and the detected moment of completion of the plasma conditioning process of the reactor corresponds to the moment of completion of cleaning the walls of the reactor from accumulated contaminants with etching products. USE - Electricity. ADVANTAGE - Increasing the accuracy of determining the moment of completion of the cleaning process. 2 cl |
| IPC 分类号 | H01L-021/02 |
| 国家 | 俄罗斯 |
| 专业领域 | 材料科学 |
| 语种 | 英语 |
| 成果类型 | 专利 |
| 文献类型 | 科技成果 |
| 条目标识符 | http://119.78.100.226:8889/handle/3KE4DYBR/17607 |
| 专题 | 中国科学院新疆生态与地理研究所 |
| 作者单位 | KURCHATOVSK NAT RES CENT INST (KURC-Non-standard) |
| 推荐引用方式 GB/T 7714 | AVERKIN S N,KUZMENKO V O,LUKICHEV V F,et al. METHOD OF DETECTING MOMENT OF COMPLETION OF CONDITIONING OF REACTOR OF PLASMA-CHEMICAL ETCHING PLANT. RU2832004-C1[P]. 2024. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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