Method of forming symmetric quantum dots consists in the fact that at first on the surface of the semiconductor substrate with technological orientation , homogeneous symmetrical recesses in the form of an inverted pyramid are formed due to anisotropic local drop etching
	CHERNENKO N E; KIRICHENKO D V; BALAKIREV S V; KRYZHANOVSKAIA N V; SOLODOVNIK M S
	2024-04-09
专利权人	UNIV SOUTH FEDERAL (USOF-C)
申请日期	2024-04-09
专利号	RU2828622-C1
成果简介	NOVELTY - Proposed method relates to electronics and optoelectronics and can be used to create structures of active elements of nano- and optoelectronics and integrated circuits based thereon. Method of forming symmetric quantum dots consists in the fact that at first on the surface of the semiconductor substrate with technological orientation (100), homogeneous symmetrical recesses in the form of an inverted pyramid are formed due to anisotropic local drop etching, then selective formation of quantum dots is carried out by depositing a solid substitution solution of variable composition (In, Al)xGa1-xAs on a surface with recesses, as a result of which there is a diffusion decomposition of the solid substitution solution in the recess due to different diffusion length of the components of the quantum well material, as a result of which in recesses there is selective self-consistent formation of symmetric quantum dots. USE - Electronics; optoelectronics. ADVANTAGE - Formation of symmetric quantum dots on the surface of a semiconductor substrate with technological orientation (100). 1 cl, 1 dwg
IPC 分类号	B82B-003/00 ; H01L-021/22
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/17312
专题	中国科学院新疆生态与地理研究所
作者单位	UNIV SOUTH FEDERAL (USOF-C)
推荐引用方式 GB/T 7714	CHERNENKO N E,KIRICHENKO D V,BALAKIREV S V,et al. Method of forming symmetric quantum dots consists in the fact that at first on the surface of the semiconductor substrate with technological orientation , homogeneous symmetrical recesses in the form of an inverted pyramid are formed due to anisotropic local drop etching. RU2828622-C1[P]. 2024.

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