Multilevel nonvolatile memory cell and method of reading information has fact that solid-state material with several metastable states of surface relief is selected
	RYBINA N V; RYBIN N B; LITVINOV V G
	2024-04-10
专利权人	UNIV RYAZAN RADIO ENG (UYRY-Soviet Institute)
申请日期	2024-04-10
专利号	RU2836152-C1
成果简介	NOVELTY - Method consists in the fact that solid-state material with several metastable states of surface relief is selected; determining the number of states for storing information; determining the minimum size of the memory element and the memory cell; each different memory element is encoded by values of reflection coefficient - information capacity; each memory element is exposed to laser radiation of certain wavelength, intensity and duration of pulses; wherein information is recorded and stored by binding to surface relief parameters of solid-state material. USE - Electronics. ADVANTAGE - Possibility of storing information on stable types of surface relief of a solid material, which provides a large number of information states without using energy sources for this purpose. 1 cl, 1 dwg
IPC 分类号	G11B-007/2403 ; G11B-007/26
国家	俄罗斯
专业领域	信息技术
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/17259
专题	中国科学院新疆生态与地理研究所
作者单位	UNIV RYAZAN RADIO ENG (UYRY-Soviet Institute)
推荐引用方式 GB/T 7714	RYBINA N V,RYBIN N B,LITVINOV V G. Multilevel nonvolatile memory cell and method of reading information has fact that solid-state material with several metastable states of surface relief is selected. RU2836152-C1[P]. 2024.

条目包含的文件
条目无相关文件。

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。