| Method for plasma-chemical etching of silicon structures includes stages of silicon etching, deposition of a passivating film, sputtering by ion bombardment of a passivating film from the bottom of the structure | |
| 2024-04-11 | |
| 专利权人 | MOSC INST ELECTRONIC TECHNOLOGY NAT RES (MOEL-Soviet Institute) |
| 申请日期 | 2024-04-11 |
| 专利号 | RU2829471-C1 |
| 成果简介 | NOVELTY - Invention can be used for production of integrated circuits, micromechanical devices – microelectromechanical systems (MEMS) and microfluidics based on silicon. Essence of the invention consists in the fact that the method for plasma-chemical etching of silicon structures includes stages of silicon etching, deposition of a passivating film, sputtering by ion bombardment of a passivating film from the bottom of the structure, wherein the ratio of the durations of the etching and deposition stages is not more than 3 with a sequence of stages: first, a silicon etching stage is carried out for 1-9 s in SF6 gas with addition of 5-7% oxygen, then a stage of deposition of a fluorocarbon film from octafluorocyclobutane for 1-3 s, after a stage of sputtering by ion bombardment of a passivating film from the bottom of the structure in a mixture of argon and SF6 gas for 0.5-1 s at a fixed value of power of the high-frequency plasma source at all stages in range of 700-800 W, while maintaining the temperature of the substrate holder with a plate in range of 15-20 °C. USE - Solid-state electrical appliances. ADVANTAGE - Enabling formation of silicon structures with ultra-low aspect ratio with minimum surface roughness and profile anisotropy. 1 cl, 3 dwg |
| IPC 分类号 | H01L-021/30 |
| 国家 | 俄罗斯 |
| 专业领域 | 材料科学 |
| 语种 | 英语 |
| 成果类型 | 专利 |
| 文献类型 | 科技成果 |
| 条目标识符 | http://119.78.100.226:8889/handle/3KE4DYBR/17243 |
| 专题 | 中国科学院新疆生态与地理研究所 |
| 作者单位 | MOSC INST ELECTRONIC TECHNOLOGY NAT RES (MOEL-Soviet Institute) |
| 推荐引用方式 GB/T 7714 | GOLISHNIKOV A A,DYUZHEV N A,KRUPKINA T YU,et al. Method for plasma-chemical etching of silicon structures includes stages of silicon etching, deposition of a passivating film, sputtering by ion bombardment of a passivating film from the bottom of the structure. RU2829471-C1[P]. 2024. |
| 条目包含的文件 | 条目无相关文件。 | |||||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论