| High-power microwave field-effect transistor on semiconductor heterostructure based on gallium nitride | |
| 2024-04-23 | |
| 专利权人 | ISTOK SCI & PROD ENTERPRISE STOCK (ISTO-Non-standard) |
| 申请日期 | 2024-04-23 |
| 专利号 | RU2827690-C1 |
| 成果简介 | NOVELTY - According to the invention, a high-power microwave field-effect transistor based on a gallium nitride-based semiconductor heterostructure comprises a semiconductor heterostructure on the front side of the semiconductor substrate, made in the following positive sequence of the following composition with the following structural parameters of its layers: nucleating layer – aluminium nitride AlN, with thickness of 15-25 nm, buffer layer – gallium nitride GaN, is simultaneously doped with iron (Fe) and carbon (C), with concentration of dopant 1018-4×1018 cm-3 and 2×1018-2×1019 cm-3, respectively, with thickness of 1.1-1.3×103 nm, at least one pair of one layer – narrow-bandgap GaN, and one layer – wide-bandgap AlN materials of semiconductor heterostructure layers, forming two-dimensional electronic gas channel of field-effect transistor near heterointerface of these layers, barrier layer – aluminium gallium nitride AlxGa1-xN, is made with molar fraction x of the chemical element of aluminium Al 50-60 percent, in the area of location of the channel of the field-effect transistor an additional passivating coating – silicon nitride Si3N4, is made on the upper surface of the barrier layer, in the area of the field-effect transistor channel with thickness of 2-5 nm, the contact layer – gallium nitride GaN, is made in the area of the source and drain electrodes, respectively, at the depth from the upper surface of the barrier layer and up to 10-15 nm from the upper surface of the layer – narrow-gap GaN material. USE - Microelectronics. ADVANTAGE - Invention increases output power of the amplification factor, the steepness of the current-voltage characteristic, and reduces the noise factor, including by reducing the specific resistance of ohmic contacts. 5 cl, 1 dwg, 1 tbl |
| IPC 分类号 | H01L-029/772 |
| 国家 | 俄罗斯 |
| 专业领域 | 材料科学 |
| 语种 | 英语 |
| 成果类型 | 专利 |
| 文献类型 | 科技成果 |
| 条目标识符 | http://119.78.100.226:8889/handle/3KE4DYBR/17045 |
| 专题 | 中国科学院新疆生态与地理研究所 |
| 作者单位 | ISTOK SCI & PROD ENTERPRISE STOCK (ISTO-Non-standard) |
| 推荐引用方式 GB/T 7714 | DUDINOV K V,KRASNIK V A,KOTEKIN R A,et al. High-power microwave field-effect transistor on semiconductor heterostructure based on gallium nitride. RU2827690-C1[P]. 2024. |
| 条目包含的文件 | 条目无相关文件。 | |||||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论