METHOD OF PRODUCING NANO-SIZED BORON FILM
	AKASHEV L A; POPOV N A; SHEVCHENKO V G
	2024-05-07
专利权人	FEDERAL STATE BUDGETARY INST (FSBI-C)
申请日期	2024-05-07
专利号	RU2830764-C1
成果简介	NOVELTY - Invention relates to nanotechnology and can be used in microelectronics to produce thin semiconductor layers on aluminium substrates, as well as radiation-protective coatings of aluminium alloys. Boron nanofilm is obtained by thermal resistive evaporation of boron compound on aluminium substrate heated to 190-200 °C. Boron compound used is boron oxide placed in a tantalum crucible. Thermal resistive evaporation is carried out at temperature of 1,500-1,550 °C in vacuum (1-5)⋅10-6 torr for 10-15 s and distance from evaporator to substrate 40-45 mm. Then annealing is performed in argon medium at temperature of 630-640 °C for 0.5-1.0 hours. USE - Nanotechnology. ADVANTAGE - Invention simplifies the method of producing a thin boron film by reducing the temperature of the evaporator. 1 cl, 1 dwg
IPC 分类号	B82Y-040/00 ; C01B-035/02 ; C23C-016/28 ; C23C-016/448 ; H01L-021/02
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/16855
专题	中国科学院新疆生态与地理研究所
作者单位	FEDERAL STATE BUDGETARY INST (FSBI-C)
推荐引用方式 GB/T 7714	AKASHEV L A,POPOV N A,SHEVCHENKO V G. METHOD OF PRODUCING NANO-SIZED BORON FILM. RU2830764-C1[P]. 2024.

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