Powerful high-voltage gallium-based Schottky barrier power diode for creating converter devices, has thin semi-insulating beta-gallium film applied to flat substrate, where single-crystal gallium oxide is used as semiconductor material
	IAKOVLEV N N; ALMAEV A V; KUSHNARYOV B O
	2024-05-22
专利权人	IAKOVLEV N N (IAKO-Individual)
申请日期	2024-05-22
专利号	RU229529-U1
成果简介	NOVELTY - The diode has a thin semi-insulating beta-gallium film applied to a flat substrate by ion-beam sputtering. Single-crystal gallium oxide is used as a semiconductor material. The diode is equipped with two metal ohmic contacts (5). A high-resistance, low-doping gallium oxide layer is formed an n-type gallium oxide substrate using epitaxy. A round hole is etched in an organic ferroelectric dielectric layer, and an anode electrode is applied to the hole in the organic ferroelectric dielectric layer. USE - Powerful high-voltage gallium-based Schottky barrier power diode for creating converter devices. ADVANTAGE - The diode is designed in a manner, so as to simplify manufacturing technology of the diode with a vertical Schottky barrier based on gallium oxide while maintaining low values of reverse leakage current in a wide temperature range. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a powerful high-voltage gallium-based Schottky barrier power diode. 1Metal contact 2Epitaxial semiconductor 3Beta-gallium substrate 4Intermediate semiconductor layer 5Metal ohmic contacts
IPC 分类号	H01L-029/872
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/16657
专题	中国科学院新疆生态与地理研究所
作者单位	IAKOVLEV N N (IAKO-Individual)
推荐引用方式 GB/T 7714	IAKOVLEV N N,ALMAEV A V,KUSHNARYOV B O. Powerful high-voltage gallium-based Schottky barrier power diode for creating converter devices, has thin semi-insulating beta-gallium film applied to flat substrate, where single-crystal gallium oxide is used as semiconductor material. RU229529-U1[P]. 2024.

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