METHOD OF FORMING PHOTORESIST MASK includes sequential application of a functional layer on a semiconductor substrate
	KULPINOV M S; PUTRYA M G; GOLISHNIKOV A A; KRUPKINA T YU
	2024-05-30
专利权人	MOSC INST ELECTRONIC TECHNOLOGY NAT RES (MOEL-Soviet Institute)
申请日期	2024-05-30
专利号	RU2827959-C1
成果简介	NOVELTY - Invention relates to the technology of manufacturing silicon-based integrated circuits and devices. Method of forming a photoresist mask includes sequential application of a functional layer on a semiconductor substrate, deposition on the surface of the functional layer of a rigid mask, application of an antireflection coating (ARC) layer on the surface of the rigid mask, application of a photoresist layer on the surface of the ARC, formation of a topological pattern in the photoresist layer using photolithography, control of the geometric parameters of the photoresist mask elements, applying a levelling layer on the formed photoresist film mask, exposing the surface of the ARC layer by etching the levelling layer material through the photoresist mask, sequential plasma etching of layers of antireflection coating, rigid mask, wherein levelling layer used is a film of self-healing material with layer thickness greater than the maximum value of microroughnesses detected during control of the geometric parameters of the photoresist mask elements, controlled effect on material of levelling layer of external factors to levelling microroughnesses on horizontal and vertical surfaces of photoresist mask due to physical and chemical properties of material of levelling layer, anisotropic plasma etching of the self-healing layer before opening the surface of the antireflection coating which is not protected by the photoresist and trimming – etching of the material of the levelling layer remaining on the side surfaces of the elements of the photoresist mask – self-healing layer using plasma etching to restore specified linear dimensions of photoresist mask elements. USE - Technology of manufacturing integrated circuits. ADVANTAGE - Invention makes it possible to significantly reduce the unevenness of the edge of the line of the photoresist mask while maintaining the required efficiency of the process of making the semiconductor device. 5 cl, 3 dwg
IPC 分类号	H01L-021/3065
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/16496
专题	中国科学院新疆生态与地理研究所
作者单位	MOSC INST ELECTRONIC TECHNOLOGY NAT RES (MOEL-Soviet Institute)
推荐引用方式 GB/T 7714	KULPINOV M S,PUTRYA M G,GOLISHNIKOV A A,et al. METHOD OF FORMING PHOTORESIST MASK includes sequential application of a functional layer on a semiconductor substrate. RU2827959-C1[P]. 2024.

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