| Method of making three-dimensional microassembly includes creating separate functional modules on silicon switching substrates and placing them one above the other with creation of vertical switching | |
| 2024-06-14 | |
| 专利权人 | MOSC INST ELECTRONIC TECHNOLOGY NAT RES (MOEL-Soviet Institute) |
| 申请日期 | 2024-06-14 |
| 专利号 | RU2830562-C1 |
| 成果简介 | NOVELTY - Invention relates to production of electronic equipment, namely to technology of producing three-dimensional modules and microassemblies based on switching substrates with unpackaged electronic components, which can be used in equipment with high level of assembly density. Method of making a three-dimensional microassembly includes creating separate functional modules on silicon switching substrates and placing them one above the other with creation of vertical switching, wherein positioning and mounting of microassembly levels and interlayer vertical switching are performed using microconnectors formed along the perimeter of switching substrates, which are formed by anisotropic etching of silicon and include a socket and a plug, through holes in the switching substrates are formed to transmit an electrical signal from one side of the substrate to the other within one level, photolithography with a spray method of applying a photoresist is used to form a topology in a blind hole of a switching substrate; electronic components of each level are mounted in a blind hole in the body of the switching substrate. USE - Electronic equipment. ADVANTAGE - Invention simplifies the assembly process and increases the reliability of the microassembly. 1 cl, 4 dwg |
| IPC 分类号 | H01L-025/04 |
| 国家 | 俄罗斯 |
| 专业领域 | 材料科学 |
| 语种 | 英语 |
| 成果类型 | 专利 |
| 文献类型 | 科技成果 |
| 条目标识符 | http://119.78.100.226:8889/handle/3KE4DYBR/16241 |
| 专题 | 中国科学院新疆生态与地理研究所 |
| 作者单位 | MOSC INST ELECTRONIC TECHNOLOGY NAT RES (MOEL-Soviet Institute) |
| 推荐引用方式 GB/T 7714 | VERTYANOV D V,KOCHERGIN M D,SOLOVEV I A,et al. Method of making three-dimensional microassembly includes creating separate functional modules on silicon switching substrates and placing them one above the other with creation of vertical switching. RU2830562-C1[P]. 2024. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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