| Chromium-compensated high-resistant gallium arsenide matrix beta-particle sensor used for electron microscopy system, has active region, and return contact provided on beta-particle irradiation side, made in form of chromium film, on surface of which mesh contact is formed from aluminum strips | |
| 2024-07-16 | |
| 专利权人 | UNIV TOMSK NAT RES (TOPO-C) |
| 申请日期 | 2024-07-16 |
| 专利号 | RU228817-U1 |
| 成果简介 | NOVELTY - A chromium-compensated high-resistant gallium arsenide matrix β -particle sensor has an active region having a thickness of no more than 400 μ m, and a return contact provided on the β -particle irradiation side, made in the form of a chromium film with a thickness of 20 nm, on the surface of which a mesh contact is formed from aluminum strips having a width of no more than 100 μ m and a thickness of 1 μ m, forming windows measuring 3x 3 mm2. USE - Chromium-compensated high-resistant gallium arsenide matrix β -particle sensor (matrix-type semiconductor device) is used for electron microscopy system for non-destructive testing of materials, diagnostic medical equipment, screening system in airports and train stations, and high-energy physics. ADVANTAGE - The chromium-compensated high-resistant gallium arsenide matrix β -particle sensor ensures minimal β -particle energy loss in the contact material and maximum absorption of β -particle energy by the active area of the sensor, and has improved response speed and sensitivity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a pixel of the matrix structure of the sensor. 1Sensitive area of the sensor 2Pixel adhesive contact 3Dielectric layer 4Indium film 5Continuous chromium film |
| IPC 分类号 | G01T-001/24 ; H01L-031/115 |
| 国家 | 俄罗斯 |
| 专业领域 | 材料科学 |
| 语种 | 英语 |
| 成果类型 | 专利 |
| 文献类型 | 科技成果 |
| 条目标识符 | http://119.78.100.226:8889/handle/3KE4DYBR/15772 |
| 专题 | 中国科学院新疆生态与地理研究所 |
| 作者单位 | UNIV TOMSK NAT RES (TOPO-C) |
| 推荐引用方式 GB/T 7714 | TOLBANOV O P,TYAZHEV A V,SHCHERBAKOV I D,et al. Chromium-compensated high-resistant gallium arsenide matrix beta-particle sensor used for electron microscopy system, has active region, and return contact provided on beta-particle irradiation side, made in form of chromium film, on surface of which mesh contact is formed from aluminum strips. RU228817-U1[P]. 2024. |
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