Matric photodetector for use in long-wave infrared region of a spectrum in thermal imaging systems, has sequentially located semi-insulating Gallium arsenide substrate with lower highly doped n-plus Gallium arsenide contact layer
	BOGOSLOVSKAIA L S; DUDIN A L; KATZAVETS N I; KULIKOV M I
	2024-07-18
专利权人	SVETLANA-ROST STOCK CO (SVET-Non-standard)
申请日期	2024-07-18
专利号	RU230396-U1
成果简介	NOVELTY - The photodetector has a sequentially located semi-insulating Gallium arsenide substrate with a lower highly doped n-plus Gallium arsenide contact layer. An active region consists of Gallium arsenide quantum wells sandwiched between undoped Aluminum Gallium arsenide barriers. A top highly doped n-plus Gallium arsenide contact layer represents a matrix of photosensitive elements in the upper contact layer. A phase hexagonal diffraction grating is formed by etching with elements of desired height with a base in form of regular hexagons with a period in three directions perpendicular to the sides of a hexagon, where total area of elements of the two-dimensional diffraction grating is 50% of the total surface area of the photosensitive elements. USE - Matric photodetector for use in a long-wave infrared region of a spectrum in thermal imaging systems. ADVANTAGE - The photodetector allows increase in photosensitivity of FDM in the thermal imaging systems. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure of a phase hexagonal two-dimensional diffraction grating in a matrix photodetector.
IPC 分类号	H01L-027/14
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/15749
专题	中国科学院新疆生态与地理研究所
作者单位	SVETLANA-ROST STOCK CO (SVET-Non-standard)
推荐引用方式 GB/T 7714	BOGOSLOVSKAIA L S,DUDIN A L,KATZAVETS N I,et al. Matric photodetector for use in long-wave infrared region of a spectrum in thermal imaging systems, has sequentially located semi-insulating Gallium arsenide substrate with lower highly doped n-plus Gallium arsenide contact layer. RU230396-U1[P]. 2024.

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