Method of creating photosensitive surface-barrier structure,characterized by the fact that a semi-transparent conducting electrode
	VOLODIN V A; KAMAEV G N; KHAMUD G A
	2024-07-18
专利权人	UNIV MISIS NAT SCI & TECHNOLOGY (UMNS-C)
申请日期	2024-07-18
专利号	RU2829701-C1
成果简介	NOVELTY - Method of creating a photosensitive surface-barrier structure, characterized by the fact that a semi-transparent conducting electrode is deposited on a silicon substrate with a tunnel-thin dielectric. Between tunnel-thin dielectric and transparent for radiation conducting electrode by method of physical evaporation in vacuum chamber with preliminary pumping to pressure of 10-6 Pa simultaneously of silicon dioxide and germanium dioxide germanosilicate glass is deposited ([GeO]x[SiO2]1-x), with x from 0.25 to 0.75 with thickness from 25 to 100 nm, at substrate temperature of 20 to 200 °C. Further, a conductive electrode which is transparent for radiation is applied. USE - Electricity. ADVANTAGE - Obtaining photocurrent in a wide spectral range. 3 cl, 2 ex
IPC 分类号	H01L-031/18
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/15727
专题	中国科学院新疆生态与地理研究所
作者单位	UNIV MISIS NAT SCI & TECHNOLOGY (UMNS-C)
推荐引用方式 GB/T 7714	VOLODIN V A,KAMAEV G N,KHAMUD G A. Method of creating photosensitive surface-barrier structure,characterized by the fact that a semi-transparent conducting electrode. RU2829701-C1[P]. 2024.

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