Semiconductor quantum register for quantum computing based on spatial states of electrons in double quantum dots, has alloyed contacts that are formed for passing current through wire at ends of wire, and additional control electrodes are placed at ends of semiconductor wire near alloyed contacts
2024-09-10
专利权人KURCHATOVSK NAT RES CENT INST (KURC-Non-standard)
申请日期2024-09-10
专利号RU232332-U1
成果简介NOVELTY - The semiconductor quantum register has a single undoped semiconductor wire (1) that is located on a dielectric substrate (3) with double quantum dots distributed along its length and is surrounded by a dielectric (2) with a system of control electrodes (4) located on the dielectric. The individual double quantum dot is formed by three control electrodes with the same distance between them, and the outer control electrodes are provided with the same length along the semiconductor wire and the structure is periodically repeated. The alloyed contacts are formed for passing current through the wire at the ends of the semiconductor wire. The additional control electrodes are placed at the ends of the semiconductor wire near the alloyed contacts. USE - Semiconductor quantum register for quantum computing based on spatial states of electrons in double quantum dots. ADVANTAGE - The quantum register is provided with scalability, the control is performed exclusively by voltage pulses, and the final state of the quantum register is measured by passing current through a semiconductor wire. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the semiconductor quantum register of double quantum dots. 1Semiconductor wire 2Dielectric 3Dielectric substrate 4Control electrode
IPC 分类号G06N-010/40
国家俄罗斯
专业领域信息技术
语种英语
成果类型专利
文献类型科技成果
条目标识符http://119.78.100.226:8889/handle/3KE4DYBR/15201
专题中国科学院新疆生态与地理研究所
作者单位
KURCHATOVSK NAT RES CENT INST (KURC-Non-standard)
推荐引用方式
GB/T 7714
VYURKOV V V,LUKICHEV V F,ROGOZHIN A E,et al. Semiconductor quantum register for quantum computing based on spatial states of electrons in double quantum dots, has alloyed contacts that are formed for passing current through wire at ends of wire, and additional control electrodes are placed at ends of semiconductor wire near alloyed contacts. RU232332-U1[P]. 2024.
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