Monolithic integrated circuit, has Si film used as dielectric of MDM structure to form high-capacity MDM capacitors, where active elements of MIS and Si films are isolated
	KUZMIN E V; PLATONOV S V; POPOV V V; USIK D A; SHTEYNGART A P
	2024-09-16
专利权人	OKB-PLANET STOCK CO (OKBP-Non-standard)
申请日期	2024-09-16
专利号	RU230779-U1
成果简介	NOVELTY - The circuit has a GaAs substrate (2) on which a microwave path in the form of a strip line, conductors of control and matching circuits, active elements including transistors and diodes, passive elements including inductors, resistors and capacitors are formed. An Si dielectric film (3) is used as a dielectric of an MDM structure to form high-capacity MDM capacitors. A combination of the dielectric film present in design of an MIS is used as dielectric of the MDM structure of small-capacity MDM capacitors. The active elements of the MIS and Si films are isolated. USE - Monolithic integrated circuit for optimizing design and topology of microcircuit crystals. ADVANTAGE - The circuit operates in upper centimeter and millimeter wavelength ranges with efficient use of crystal area, while improving reproducibility of electrical parameters achieved without complicating technological process. The circuit makes area of plates sufficient to maintain manufacturing accuracy by reducing influence of technological deviations in overall dimensions due to misalignment, distortion of topological pattern and edge etching of metallization. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a monolithic integrated circuit. 1Back side 2GaAs substrate 3Si dielectric film 4Metallization 6Upper lining of capacitor
IPC 分类号	H01H-027/10
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/15147
专题	中国科学院新疆生态与地理研究所
作者单位	OKB-PLANET STOCK CO (OKBP-Non-standard)
推荐引用方式 GB/T 7714	KUZMIN E V,PLATONOV S V,POPOV V V,et al. Monolithic integrated circuit, has Si film used as dielectric of MDM structure to form high-capacity MDM capacitors, where active elements of MIS and Si films are isolated. RU230779-U1[P]. 2024.

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