METHOD OF MANUFACTURING MONOLITHIC MICROWAVE INTEGRATED CIRCUIT includes forming on the front side of the semiconductor substrate a part of active and passive elements
	ZAKHAROV A N; OREKHOVA O A; KRASNIK V A; KUVSHINOVA N A
	2024-09-16
专利权人	ISTOK SCI & PROD ENTERPRISE STOCK (ISTO-Non-standard)
申请日期	2024-09-16
专利号	RU2835783-C1
成果简介	NOVELTY - Invention relates to the technology of manufacturing microelectronic devices. Method of manufacturing a monolithic integrated circuit of the microwave range includes forming on the front side of the semiconductor substrate a part of active and passive elements, thinning of semiconductor substrate from reverse side to required thickness in two stages, formation of other part of elements on reverse side of semiconductor substrate, formation of through holes by means of plasma-chemical etching in two stages, formation of metal coating on surface of walls of through holes and free surface of semiconductor substrate. Thinning of the semiconductor substrate from the back side in two steps: at first stage, mechanical grinding is carried out with grinding powder based on aluminium oxide Al2O3, and at the second stage – chemical-mechanical polishing with a polishing suspension containing titanium dioxide, sodium hypochlorite and deionised water. USE - Electricity. ADVANTAGE - Reducing the cost of the technological process of the method of making a monolithic microwave integrated circuit while maintaining the required values of electrophysical parameters. 4 cl, 1 dwg, 1 tbl
IPC 分类号	H01L-021/70 ; H01L-021/77
国家	俄罗斯
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/15137
专题	中国科学院新疆生态与地理研究所
作者单位	ISTOK SCI & PROD ENTERPRISE STOCK (ISTO-Non-standard)
推荐引用方式 GB/T 7714	ZAKHAROV A N,OREKHOVA O A,KRASNIK V A,et al. METHOD OF MANUFACTURING MONOLITHIC MICROWAVE INTEGRATED CIRCUIT includes forming on the front side of the semiconductor substrate a part of active and passive elements. RU2835783-C1[P]. 2024.

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