Indium gallium nitride notch-based triple gate double heterojunction high-electron-mobility transistor device comprises substrate, first set of layers arranged on substrate, where first set of layers comprise nucleation layer and buffer layer arranged on nucleation layer
	PANDEY S; GUPTA N; VERMA M; NANDI A
	2024-10-16
专利权人	NAT INST TECHNOLOGY KURUKSHETRA (NATE-Non-standard)
申请日期	2024-10-16
专利号	IN202411078487-A
成果简介	NOVELTY - Indium gallium nitride (InGaN) notch-based triple gate (TG) double heterojunction (DH) high-electron-mobility transistor (HEMT) device (200) comprises a substrate (201), a first set of layers (102) arranged on the substrate (201). The first set of layers comprise a nucleation layer (202) and a buffer layer (203) arranged on the nucleation layer (202). A notch layer (204) is arranged over the first set of layers. The notch layer (204) comprises indium gallium nitride (InGaN) in a predefined composition by weight. A second set of layers (104)are arranged over the notch layer. The second set of layers comprise a channel layer (205), a barrier layer (206), and a cap layer (207). A source electrode (208) is arranged on one end of the cap layer. A drain electrode (210) is arranged on the cap layer arranged opposite to the source electrode. USE - Indium gallium nitride notch-based triple gate double heterojunction high-electron-mobility transistor device. ADVANTAGE - The indium gallium nitride notch-based triple gate double heterojunction high-electron-mobility transistor device improves the overall radio frequency (RF) performance for high-power and high-temperature operation, and can target Ideal Subthreshold Swing (SS) and improve the breakdown characteristics for a 100-nanometer gate length (Lgate)TG DH HEMT device. DETAILED DESCRIPTION - Indium gallium nitride (InGaN) notch-based triple gate (TG) double heterojunction (DH) high-electron-mobility transistor (HEMT) device (200) comprises a substrate (201), a first set of layers (102) arranged on the substrate (201). The first set of layers comprise a nucleation layer (202) and a buffer layer (203) arranged on the nucleation layer (202). A notch layer (204) is arranged over the first set of layers. The notch layer (204) comprises indium gallium nitride (InGaN) in a predefined composition by weight. A second set of layers (104)are arranged over the notch layer. The second set of layers comprise a channel layer (205), a barrier layer (206), and a cap layer (207). A source electrode (208) is arranged on one end of the cap layer. A drain electrode (210) is arranged on the cap layer arranged opposite to the source electrode. A triple gate terminal electrode (209) is arranged between the source electrode and the drain electrode. The triple gate terminal electrode (209) includes an extension in contact with the second set of layers and the notch layer. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of an indium gallium nitride notch-based triple gate double heterojunction high-electron-mobility transistor device. 203Buffer layer 204Notch layer 205Channel layer 206Barrier layer 207Cap layer
IPC 分类号	H01L-021/335 ; H01L-027/07 ; H01L-029/06 ; H01L-029/10 ; H01L-029/778 ; H01L-029/872
国家	印度
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/14865
专题	中国科学院新疆生态与地理研究所
作者单位	NAT INST TECHNOLOGY KURUKSHETRA (NATE-Non-standard)
推荐引用方式 GB/T 7714	PANDEY S,GUPTA N,VERMA M,et al. Indium gallium nitride notch-based triple gate double heterojunction high-electron-mobility transistor device comprises substrate, first set of layers arranged on substrate, where first set of layers comprise nucleation layer and buffer layer arranged on nucleation layer. IN202411078487-A[P]. 2024.

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