Method for directed energy deposition, involves reducing effect of residual stresses on substrate, by deposition of material on first side and second side of substrate by deposition system, thus preventing deformation of substrate
	SIDDHARTHA; KARADE S R; GANESAN G; GUPTA N K; POOLAN K P K
	2024-10-26
专利权人	INDIAN INST TECHNOLOGY BOMBAY (IITB-C)
申请日期	2024-10-26
专利号	IN202421081875-A
成果简介	NOVELTY - Directed energy deposition comprises forming a component by layer-by-layer deposition of layers of material on two sides of a substrate by depositing layer(s) of the material on a first side and a second side of the substrate, respectively; and reducing effect of residual stresses on the substrate by the deposition of material. The second side is disposed opposite to the first side. The deposition of the layers on the first and second sides prevents deformation of substrate. The substrate is turned from the first to the second side by a substrate holding assembly. USE - Method for facilitating directed energy deposition for mitigating the effect of residual stresses on the deformation of a substrate and a component by a deposition system. ADVANTAGE - The method enables reducing residual stresses on the substrate, preventing deformation of the substrate and the component, ease in manufacturing, and allowing manufacturing of both symmetric and asymmetric components. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a deposition system for directed energy deposition.
IPC 分类号	B23K-010/02 ; B23K-015/00 ; B23K-026/00 ; B23K-026/342 ; B23K-031/00 ; B23K-037/04 ; B23K-009/04 ; B23K-009/23
国家	印度
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/14747
专题	中国科学院新疆生态与地理研究所
作者单位	INDIAN INST TECHNOLOGY BOMBAY (IITB-C)
推荐引用方式 GB/T 7714	SIDDHARTHA,KARADE S R,GANESAN G,et al. Method for directed energy deposition, involves reducing effect of residual stresses on substrate, by deposition of material on first side and second side of substrate by deposition system, thus preventing deformation of substrate. IN202421081875-A[P]. 2024.

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