DG-FinFET device for detecting thyroid cancer cells, for labelfree detection, comprises source region, channel region, and drain region made of silicon material, double gate structure positioned on channel region, nanocavity embedded in device structure and oxide layer that acts as insulation
	SUGUNA M; HEMALATHA M; RAJALAKSHMI E; BALAMURUGAN N B
	2024-12-03
专利权人	THIAGARAJAR COLLEGE ENG (THIA-Non-standard)
申请日期	2024-12-03
专利号	IN202441095158-A
成果简介	NOVELTY - Double Gate Fin Field Effect Transistor (DG-FinFET) device comprises a source region (204), a channel region (206), and a drain region (205) made of silicon material; a double gate structure (201, 207) positioned on the top and bottom of the channel region; a nanocavity (202) embedded in the device structure to hold biological analytes for detection and an oxide layer (203) made of silicon dioxide (SiO2) that acts as insulation between the gate and channel regions, where the detection of thyroid cancer cells is based on the dielectric permittivity of the biological analytes, with a higher dielectric permittivity corresponding to thyroid cancer tissue and causing an increase in drain current. USE - Double Gate Fin Field Effect Transistor (DG-FinFET) device for detecting thyroid cancer cells, used for labelfree detection such as detection without the need for chemical labels or markers. ADVANTAGE - The DG-FinFET device increases surface area for receptor binding and dual gates provides improved electrostatic control, ensuring accurate, rapid, and label-free biomolecule detection with reduced noise, enhances the ability to detect cancer cells, shows improved electrostatic control, reduced short-channel effects, minimized leakage current compared to other MOSFET device, enhances detection of thyroid cancer cells, easy to operate, wellsuited for a range of biosensing applications beyond thyroid cancer detection has low sensitivity, low power consumption, and better electrostatic control and for detecting other types of biomolecules, cells, or diseases, by customizing the nanocavity for different biological targets and simplifies the bio-sensing process and reduces costs and has high selectivity, and fast response make it highly applicable for real-world medical diagnostics and other bio-sensing fields. DESCRIPTION OF DRAWING(S) - The drawing shows a structural view of a Double Gate Fin Field Effect Transistor (FinFET). 201Double gate structre 202Nano cavity 203Oxide layer 204Source region 206Channel region
IPC 分类号	G01N-027/414 ; G01N-033/543 ; G01N-033/574 ; H01L-029/66 ; H01L-029/78
国家	印度
专业领域	医药卫生
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/14253
专题	中国科学院新疆生态与地理研究所
作者单位	THIAGARAJAR COLLEGE ENG (THIA-Non-standard)
推荐引用方式 GB/T 7714	SUGUNA M,HEMALATHA M,RAJALAKSHMI E,et al. DG-FinFET device for detecting thyroid cancer cells, for labelfree detection, comprises source region, channel region, and drain region made of silicon material, double gate structure positioned on channel region, nanocavity embedded in device structure and oxide layer that acts as insulation. IN202441095158-A[P]. 2024.

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