| Proximity sensing apparatus has dielectric layer is disposed on conductive plate, silicon layer is disposed on the dielectric layer, and having groove is set on lower surface, absorber is received in the groove, and sandwiched between upper surface of the dielectric layer, and metamaterial layer | |
| 2024-12-10 | |
| 专利权人 | UNIV VISHWANATH KARAD MIT WORLD PEACE (UYVI-Non-standard) |
| 申请日期 | 2024-12-10 |
| 专利号 | IN202421097627-A |
| 成果简介 | NOVELTY - Proximity sensing apparatus (100) comprises: a conductive plate (110); a dielectric layer (120) is disposed on the conductive plate; a silicon layer (130) is disposed on the dielectric layer, where the silicon layer having a groove (135) is set on a lower surface; an absorber is received in the groove, the absorber is sandwiched between an upper surface of the dielectric layer and the lower surface of the silicon layer; a metamaterial layer comprising metamaterial structure is disposed on the silicon layer, where the metamaterial structure and the absorber layer are used to concentrate electromagnetic fields to enhance proximity detection in a non-linear manner. The conductive plate is made of material comprising copper, aluminum, gold, silver, and alloys. The dielectric layer is made of material comprising silicon dioxide, silicon nitride, polyimide, and polymethyl methacrylate (PMMA). USE - Used as proximity sensing apparatus. ADVANTAGE - The apparatus: adopts metamaterial structure concentrates electromagnetic fields to enhance proximity detection in a non-linear manner, achieves enhancement factor of no less than 10 compared to conventional capacitive sensors; adopts conductive plate can be made of metal, while the dielectric layer can consist of materials e.g. silicon dioxide and silicon nitride; adopts silicon layer of 10-500 nm in thickness; adopts metamaterial structure may include split ring resonators and operates in a frequency of 1 MHz and 10 GHz having negative dielectric constant; and has significantly improved sensitivity and resolution of proximity detection. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional side view of the proximity sensing apparatus. 100Proximity sensing apparatus 110Conductive plate 120Dielectric layer 130Silicon layer 135Groove |
| IPC 分类号 | A61M-015/06 ; G01S-007/481 ; G01S-007/524 ; H01L-031/0203 ; H04W-052/36 |
| 国家 | 印度 |
| 专业领域 | 材料科学 |
| 语种 | 英语 |
| 成果类型 | 专利 |
| 文献类型 | 科技成果 |
| 条目标识符 | http://119.78.100.226:8889/handle/3KE4DYBR/14168 |
| 专题 | 中国科学院新疆生态与地理研究所 |
| 作者单位 | UNIV VISHWANATH KARAD MIT WORLD PEACE (UYVI-Non-standard) |
| 推荐引用方式 GB/T 7714 | SARANG R B,RAZDAN S,SHINDE S S. Proximity sensing apparatus has dielectric layer is disposed on conductive plate, silicon layer is disposed on the dielectric layer, and having groove is set on lower surface, absorber is received in the groove, and sandwiched between upper surface of the dielectric layer, and metamaterial layer. IN202421097627-A[P]. 2024. |
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