Improved metal-oxide-semiconductor transistor, has gate dielectric layer composed of hafnium oxide doped with lanthanum and nitrogen to form dielectric constant material hafnium lanthanum oxygen nitride configured to optimize dielectric constant, gate dielectric layer is integrated into transistor
	PANDEY R K
	2024-12-20
专利权人	VELLORE INST TECHNOLOGY (VELL-Non-standard)
申请日期	2024-12-20
专利号	IN202441101559-A
成果简介	NOVELTY - Improved metal-oxide-semiconductor (MOS) transistor (100) comprises a gate dielectric layer (102) composed of hafnium oxide (HfO2) doped with lanthanum (La) and nitrogen (N) in a ratio to form a dielectric constant material hafnium lanthanum oxygen nitride (HfLaON) (104) configured to optimize a dielectric constant. The HfLaON comprises a dielectric constant ranging from 34-42, depending on the La ratio, where the gate dielectric layer reduces equivalent oxide thickness (EOT) to less than 1 nm while minimizing gate leakage current. The gate dielectric layer is integrated into the MOS transistor by coupling with a gate electrode (106) of the MOS transistor to enable capacitive switching for device operation. USE - Improved metal-oxide-semiconductor transistor. ADVANTAGE - The improved metal-oxide-semiconductor (MOS) transistor has reduced equivalent oxide thickness (EOT) and minimized leakage current, tailored for high performance applications, providing a scalable solution to meet the demands of modern semiconductor manufacturing and next-generation electronics. The HfLaON reduces gate leakage current by multiple orders of magnitude, significantly improving energy efficiency and transistor reliability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating an improved metal-oxide-semiconductor (MOS) transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a block view of an improved metal-oxide-semiconductor transistor. 100MOS transistor 102Gate dielectric layer 104Dielectric constant material (HfLaON) 106gate electrode
IPC 分类号	C23C-016/40 ; H01L-021/02 ; H01L-021/28 ; H01L-029/423 ; H01L-029/51
国家	印度
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/13917
专题	中国科学院新疆生态与地理研究所
作者单位	VELLORE INST TECHNOLOGY (VELL-Non-standard)
推荐引用方式 GB/T 7714	PANDEY R K. Improved metal-oxide-semiconductor transistor, has gate dielectric layer composed of hafnium oxide doped with lanthanum and nitrogen to form dielectric constant material hafnium lanthanum oxygen nitride configured to optimize dielectric constant, gate dielectric layer is integrated into transistor. IN202441101559-A[P]. 2024.

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