Semiconductor structure used in electronic devices, comprises substrate layer composed of silicon, silicon carbide, or other suitable semiconductor material, graphene layer deposited or transferred onto substrate layer, dielectric layer, and gate electrode
	SINGH K A; MANDALIYA D; RUHIL H; KUMAR H; PAHWA K; SHARMA M; KANSAL Y; JAIN B
	2024-12-21
专利权人	VIVEKANANDA PROFESSIONAL STUDIES TECH (VIVE-Non-standard)
申请日期	2024-12-21
专利号	IN202411101662-A
成果简介	NOVELTY - Semiconductor structure comprises a substrate layer composed of silicon, silicon carbide, or other suitable semiconductor material, a graphene layer deposited or transferred onto the substrate layer, a dielectric layer positioned above or below the graphene layer to isolate it from other functional layers, a gate electrode, source, and drain contacts integrated to form a transistor structure where the graphene layer provides enhanced carrier mobility and reduced power consumption compared to conventional silicon-only structures. USE - Semiconductor structure used in electronic devices (claimed). ADVANTAGE - The semiconductor structure is integrated with graphene that significantly enhances carrier mobility, allowing for faster electron and hole movement within the device, thus improving the overall speed and performance of electronic components. The power consumption in semiconductor devices is reduced by utilizing the high thermal conductivity and low resistivity of graphene, which facilitates more efficient charge carrier transport and minimizes energy losses associated with heat dissipation. The overall reliability and lifespan of semiconductor device is improved by reducing power consumption and minimizing the adverse effects of heat accumulation, which can cause degradation of materials and failure in high-performance electronics. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method for fabricating the semiconductor structure; and (2) an electronic device. DESCRIPTION OF DRAWING(S) - The drawing illustrates the graphene-integrated semiconductor structure for enhanced carrier mobility and reduced power consumption.
IPC 分类号	H01L-023/00 ; H01L-029/16 ; H01L-029/66 ; H01L-029/778 ; H01L-029/78
国家	印度
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/13895
专题	中国科学院新疆生态与地理研究所
作者单位	VIVEKANANDA PROFESSIONAL STUDIES TECH (VIVE-Non-standard)
推荐引用方式 GB/T 7714	SINGH K A,MANDALIYA D,RUHIL H,et al. Semiconductor structure used in electronic devices, comprises substrate layer composed of silicon, silicon carbide, or other suitable semiconductor material, graphene layer deposited or transferred onto substrate layer, dielectric layer, and gate electrode. IN202411101662-A[P]. 2024.

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