Spintronic memory device high-performance application, has a pair of voltage terminals comprising terminal provided on top and bottom electrodes, where voltage applied between top electrode and bottom electrode triggers migration in oxygen vacancies in oxidized iron film alpha-ferric oxide
	HUSAIN A; JAMMALAMADAKA S
	2024-12-24
专利权人	INDIAN INST TECHNOLOGY HYDERABAD (INTE-Non-standard)
申请日期	2024-12-24
专利号	IN202441102812-A
成果简介	NOVELTY - Spintronic memory device, has a bottom electrode fluorine-doped tin oxide (FTO) bottom; an iron (Fe) film of predetermine thickness deposited on the bottom electrode, the iron film having an oxidized top surface; a top electrode silver (Ag) composed at least of silver conducting epoxy provided on the top of iron oxide film; a pair of voltage terminals (V) comprises a terminal provided on the top and bottom electrodes, where a voltage applied between the top electrode (Ag) and bottom electrode (FTO) triggers a migration in oxygen vacancies in the oxidized iron film alpha-ferric oxide (α-Fe2O3) that generates oxygen defects and act as pinning centers for the externally applied magnetic field, which cause a vertical shift in magnetization. USE - Spintronic memory device high-performance application. ADVANTAGE - The device achieves 64 distinct and stable magnetization states, which may enable 6-bit data storage. This memory operation allows for efficient data management and retrieval. Achieving 64 distinct magnetization states and a significant vertical magnetization shift (MEB) offers numerous advantages across diverse applications. The ability to encode six bits of data per memory cell may provide a 64-fold increase in data storage capacity compared to traditional binary systems, making it highly suitable for high-density memory devices in advanced computing, consumer electronics, and enterprise storage systems. The tunable MEB, reaching up to 79%, allows precise control of magnetization states with minimal energy input, enabling energy-efficient operation without the need for field cooling. This feature makes the device ideal for portable electronics, low-power devices, and sustainable computing technologies. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for A method of manufacturing a spintronic memory device.
IPC 分类号	H01L-021/28 ; H01L-021/8238 ; H01L-029/66 ; H10N-050/85 ; H10N-070/00
国家	印度
专业领域	材料科学
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/13843
专题	中国科学院新疆生态与地理研究所
作者单位	INDIAN INST TECHNOLOGY HYDERABAD (INTE-Non-standard)
推荐引用方式 GB/T 7714	HUSAIN A,JAMMALAMADAKA S. Spintronic memory device high-performance application, has a pair of voltage terminals comprising terminal provided on top and bottom electrodes, where voltage applied between top electrode and bottom electrode triggers migration in oxygen vacancies in oxidized iron film alpha-ferric oxide. IN202441102812-A[P]. 2024.

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