System for characterizing and controlling operations of semiconductor memory device i.e. two-terminal semiconductor memory device, has relays for controlling memory operations of semiconductor memory device and generating Capacitance Voltage (CV) curve for semiconductor memory device
	ACHARYA V; MAROTHYA H; MONDAL S
	2025-03-31
专利权人	INDIAN INST TECHNOLOGY BOMBAY (IITB-C)
申请日期	2025-03-31
专利号	IN202521031790-A
成果简介	NOVELTY - The system (1000) has a microcontroller (100) connected to an input supply for generating high frequency source signal, where the high frequency source signal is provided as single polarity square wave signal of frequency and voltage. A read pulse generation unit (200) is connected to the microcontroller to generate and amplify continuous dual polarity triangular wave signal from the high frequency single polarity square wave signal. A signal slicing unit (300) is connected to the pulse generation unit and the microcontroller, where an operational control and isolation unit (400) receives finite triangular pulses as input ramp signal and relay control signals from the microcontroller. Two relays (420) receive relay control signals for activation, where the relays control memory operations of a semiconductor memory device (500) and generate Capacitance Voltage (CV) curve for the semiconductor memory device during control of memory operations. USE - System for characterizing and controlling operations of a semiconductor memory device i.e. two-terminal semiconductor memory device. ADVANTAGE - The system provides precise control during device testing, and improves overall system performance, and realizes extraction to enhance accuracy in identifying flat-band voltage, and facilitates analysis of shifts in CV characteristics due to programming or erasing, and improves reliability of memory device characterization, and minimizes power consumption, and reduces risk of disrupting memory state, and improves overall efficiency. The system is versatile, efficient, and cost-effective for metal-oxide-semiconductor and memory device characterization. DETAILED DESCRIPTION - The relays are provided as double pole double throw (DPDT) relays. An INDEPENDENT CLAIM is included for a method for characterizing and controlling operations of a semiconductor memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic block diagram of a system for characterizing and controlling operations of a semiconductor memory device. 100Microcontroller 200Read pulse generation unit 300Signal slicing unit 400Operational control and isolation unit 420Relays 500Semiconductor memory device 1000System
IPC 分类号	G11C-007/10 ; G11C-007/22 ; G11C-008/18
国家	印度
专业领域	信息技术
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/13311
专题	中国科学院新疆生态与地理研究所
作者单位	INDIAN INST TECHNOLOGY BOMBAY (IITB-C)
推荐引用方式 GB/T 7714	ACHARYA V,MAROTHYA H,MONDAL S. System for characterizing and controlling operations of semiconductor memory device i.e. two-terminal semiconductor memory device, has relays for controlling memory operations of semiconductor memory device and generating Capacitance Voltage (CV) curve for semiconductor memory device. IN202521031790-A[P]. 2025.

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