Novel hybrid radio frequency-direct current converter using complementary metal oxide semiconductor n-well process, has first stage which typically uses cross-coupled differential drive topology, that employs both n-channel, and p-channel metal oxide semiconductor field effect transistor
	MADHAV B T P; BABU R B; INTHIYAZ S; NIKHILA S N M; VARDHAN H K; PRASAD G R K
	2025-04-03
专利权人	KONERU LAKSHMAIAH EDUCATION FOUND (KONE-Non-standard) ; MADHAV B T P (MADH-Individual)
申请日期	2025-04-03
专利号	IN202541033050-A
成果简介	NOVELTY - Novel hybrid radio frequency (RF)-direct current (DC) converter using complementary metal oxide semiconductor (CMOS) n-well process, comprises first stage which typically uses the CCDD(Cross-Coupled Differential Drive) topology, that employs both n-channel metal oxide semiconductor field effect transistor (NMOS) and p-channel metal oxide semiconductor field effect transistor (PMOS) transistors. The n-Well process provides the necessary isolation for PMOS transistors while grounding the NMOS source and bulk, ensuring efficient operation. The subsequent stages of the converter can be designed using only PMOS transistors, reducing complexity and cost. This hybrid approach leverages the n-Well process to fabricate the entire circuit without requiring the more expensive twin-Well process. The n-Well process enables the converter to achieve high power conversion efficiency (PCE) and a wide dynamic range. USE - Novel hybrid radio frequency-direct current converter using complementary metal oxide semiconductor n-well process. ADVANTAGE - The CMOS n-Well process enables the fabrication of both NMOS and PMOS transistors on the same silicon substrate. The n-Well region isolates PMOS transistors, while NMOS transistors reside in the p-type substrate. This isolation allows for the efficient integration of complementary transistors, which is essential for designing high-efficiency rectifier circuits in RF-to-DC converters. The CMOS n Well process is more economical compared to the twin-Well process, which is often used for multistage designs. This makes it a preferred choice for low-cost energy harvesting applications. The novel hybrid design where the first stage uses a Cross-Coupled Differential Drive (CCDD) topology with NMOS and PMOS transistors, while subsequent stages use only PMOS transistors. This approach simplifies the design and reduces fabrication costs. The simulation results using CADENCE in 0.18 µm TSMC CMOS technology show that the design achieves linear DC output voltage across multiple stages, and also demonstrates a power conversion efficiency (PCE) greater than 20 %. DETAILED DESCRIPTION - Novel hybrid radio frequency (RF)-direct current (DC) converter using complementary metal oxide semiconductor (CMOS) n-well process, comprises first stage which typically uses the CCDD(Cross-Coupled Differential Drive) topology, that employs both n-channel metal oxide semiconductor field effect transistor (NMOS) and p-channel metal oxide semiconductor field effect transistor (PMOS) transistors. The n-Well process provides the necessary isolation for PMOS transistors while grounding the NMOS source and bulk, ensuring efficient operation. The subsequent stages of the converter can be designed using only PMOS transistors, reducing complexity and cost. This hybrid approach leverages the n-Well process to fabricate the entire circuit without requiring the more expensive twin-Well process. The n-Well process enables the converter to achieve high power conversion efficiency (PCE) and a wide dynamic range, making it suitable for low-power systems like internet of things (loT) devices and wireless sensors. The designs using the n-Well process are often validated through simulation tools like CADENCE, ensuring proper functionality and linear DC output voltage across multiple stages. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of novel hybrid radio frequency-direct current converter using complementary metal oxide semiconductor n-well process.
IPC 分类号	H01L-021/8238 ; H01L-027/092 ; H02J-050/20 ; H02M-007/217 ; H04W-084/18
国家	印度
专业领域	信息技术
语种	英语
成果类型	专利
文献类型	科技成果
条目标识符	http://119.78.100.226:8889/handle/3KE4DYBR/13212
专题	中国科学院新疆生态与地理研究所
作者单位	1.KONERU LAKSHMAIAH EDUCATION FOUND (KONE-Non-standard) 2.MADHAV B T P (MADH-Individual)
推荐引用方式 GB/T 7714	MADHAV B T P,BABU R B,INTHIYAZ S,et al. Novel hybrid radio frequency-direct current converter using complementary metal oxide semiconductor n-well process, has first stage which typically uses cross-coupled differential drive topology, that employs both n-channel, and p-channel metal oxide semiconductor field effect transistor. IN202541033050-A[P]. 2025.

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