其他名称：
25-29-00761
项目负责人：
Koryakin Alexander
发表日期：
2025
主持机构：
Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences,
国家：
俄罗斯
开始日期：
2025
结束日期：
2026
简介：
Microrods (MR) of gallium nitride, a wide-band semiconductor with high thermal and chemical stability, are promising materials for the creation of electronic and optoelectronic devices. In particular, it is possible to create light-emitting diodes based on GaN MR . For this purpose, a multilayer core-shell InGaN heterostructure is formed on the surface of GaN MR. Due to the large ratio of the MR area to volume, it is possible to increase the active surface of the light-emitting structure by 10 times compared to planar InGaN heterostructures. Another application of single GaN MRs is to use them as the active region of optical microresonators with "whispering gallery" type modes. As is known, microresonators of this type have high Q-factor and frequency stability. The vibrational modes of the "whispering gallery" are created due to the total internal reflection at the six semiconductor/air interfaces (side walls) GaN MR. In addition, an important application of MR GaN is the creation of highly sensitive gas sensors, the principle of operation of which is based on changes in conductivity during adsorption on the surface of gas molecules. The efficiency of the devices based on GaN MR is determined by the degree of uniformity of their morphology, polarity and surface density on the substrate. Therefore, the main problem of GaN MR synthesis, the solution of which is necessary to obtain industrial technology, is to obtain arrays with a high degree of uniformity. The task that the project aims to solve is the synthesis of GaN MRs with controlled morphology and surface density on silicon substrates to create applications in optoelectronics. To solve this problem, a new combined method of synthesis of GaN MR, consisting of two stages, will be used. At the first stage, an ordered array of submicron-sized whiskers GaN is formed on silicon substrates by the selective method of molecular beam epitaxy with plasma activation of nitrogen. At the second stage, the growth of GaN MR is carried out by overgrowing an array of whiskers GaN by hydride vapor-phase epitaxy. This growth method will ensure the formation of an ordered array of GaN MRs of high crystalline quality with specified sizes of individual MRs in a wide range. For selective area growth, silicon oxide masks are formed on silicon substrates using lithographic methods, including microsphere lithography.
专业领域：
材料科学
语种：
英语
